Discover a scalable transfer printing process for integrating III-V semiconductors onto silicon, enhancing SWIR photodetector performance with high throughput, room-temperature processing, and reusability of source wafers.
This innovative transfer printing technology enables the integration of III-V semiconductors, such as InGaAs, onto silicon, addressing challenges in directly growing these materials on silicon substrates. By employing a scalable and selective transfer process, this method achieves high-performance shortwave infrared (SWIR) photodetectors with improved light absorption and carrier transport. Key advantages include room-temperature processing and the reusability of source wafers, making it a flexible and efficient alternative to traditional epitaxial growth methods.
Currently at Technology Readiness Level 4, this technology has been validated at laboratory scale with plans for further optimization, including photodetector fabrication, chemical etching improvement, transfer dynamics studies, and performance validation to meet industry standards.
Northeastern University is a private, comprehensive R1 research university based in Boston with a global campus network. Its century-old cooperative education model integrates full-time, paid placements with academic study, enabling companies to access vetted talent and long-term pipelines worldwide. Industry collaboration is supported by a suburban innovation campus offering test beds, secure labs, and fee-for-use core facilities, alongside co-located partner spaces. The university attracts competitive federal research funding from agencies such as the NSF and NIH. A dedicated technology transfer office streamlines IP, licensing, and startup formation for corporate partnerships.