Scalable low-temperature deposition of bismuth oxyselenide thin films for infrared photodetection

Technology
In development
Company

Atomix Inc presents a scalable method for depositing bismuth oxyselenide thin films on silicon at CMOS-compatible temperatures for superior short-wavelength infrared (SWIR) detection. This approach offers tunable bandgaps, high charge mobility, and easy integration with existing silicon technology.

Overview

Atomix Inc introduces a groundbreaking technique for the low-temperature, scalable deposition of bismuth oxyselenide thin films on silicon substrates, specifically designed for short-wavelength infrared (SWIR) photodetection. Bismuth oxyselenide offers significant advantages over traditional III-V semiconductors, including tunable narrow bandgaps and exceptionally high charge mobilities, making it an ideal material for CMOS-compatible applications.

Technical specifications
  • Material Composition: Bismuth oxyselenide (Bi2O3-xSex) with tunable bandgaps ranging from 0.22 eV to 0.8 eV.
  • Deposition Method: Chemical vapor deposition at temperatures below 300°C, ensuring CMOS compatibility.
  • Key Features:
    • High charge mobility exceeding 10,000 cm²/Vs.
    • Weak van der Waals interfacial interaction enables easy integration with silicon despite lattice mismatches.
    • Scalable to 8'' wafer sizes, suitable for large-scale production.
Technology readiness level

Currently at TRL 4, this technology has been validated in a laboratory setting. Ongoing efforts focus on optimizing thin film composition and geometry to enhance SWIR absorption efficiency, with future work planned to simulate and pattern films to maximize performance.


About Atomix Inc (dba 2Dlayer)

2DLayer, operating as Atomix Inc, specializes in the production of high-quality two-dimensional transition metal dichalcogenide (TMDC) materials. The company utilizes chemical vapor deposition (CVD) to manufacture films, flakes, and wafers, including MoS2, WS2, MoSe2, and WSe2. In addition to standard materials, they offer custom growth and transfer services, allowing for the fabrication of complex heterostructures tailored to specific substrate requirements such as sapphire or SiO2/Si. Their technical capabilities include providing alloyed or doped TMDC materials and performing basic material characterization like Raman, PL, and AFM to meet precise research and industrial specifications.

These materials serve as foundational components for next-generation electronics, aiming to revolutionize the semiconductor industry by leveraging the unique properties of 2D materials. 2DLayer focuses on supporting researchers and industrial partners by providing high-quality, reliable materials and offering a satisfaction guarantee on their products and custom services. By providing both standard off-the-shelf options and bespoke manufacturing solutions, the company facilitates the development of two-dimensional devices, emphasizing a customer-centric approach to material science and innovation. All products are manufactured in the USA.

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