Innovative method for growing nitride semiconductors using thermal or plasma-enhanced CVD with metal chlorides to reduce activation energy, applicable to substrates like sapphire and silicon.
The proposed technology offers an advanced method for the growth of nitride-based semiconductors using thermal or plasma-enhanced chemical vapor deposition (CVD). The process utilizes nitrogen gas and metal chlorides such as AlCl3, InCl3, or GaCl3 to facilitate the growth of both binary and ternary nitrides like InGaN and AlGaN. This method is applicable to various substrates, including sapphire, silicon wafers, and mica, providing a versatile solution for semiconductor fabrication.
This research is currently at TRL 3, with ongoing development and optimization phases planned to further validate and enhance the growth processes for various substrates and nitride types.
NJIT is a public polytechnic research university (Carnegie R1) in Newark, serving the New York–New Jersey innovation corridor. Industry engages on campus through VentureLink, the university’s startup incubator in University Heights Science Park and the Newark Innovation Zone, and via a large makerspace that supports prototyping for external partners. The New Jersey Innovation Institute (NJII), a corporation of NJIT, provides an industry‑facing gateway, including a venture‑studio model launched with the state’s economic‑development authority, to speed translation and scale. Research is backed by competitive federal funding from agencies such as NSF, NIH, DOE and DoD. An Intellectual Property and Technology Licensing Office manages IP, licensing and startup formation alongside NJII and VentureLink.