Amorphous metal-imidazolate resists for EUV lithography
Introducing amorphous metal-imidazolate films (aZIFs) as innovative resists for extreme ultraviolet (EUV) lithography. These resists offer tunable composition and sub-nanometer thickness control, achieving sensitivity as low as 5 mJ/cm2, for advanced patterning applications.
Overview
Amorphous metal-imidazolate films (aZIFs) represent a new class of metal-organic resists designed for extreme ultraviolet (EUV) lithography. These films leverage the structural flexibility of zeolitic imidazolate frameworks (ZIFs), allowing for precise control over thickness and composition. By coordinating metal ions such as Zn, Co, and In with various imidazole anions, aZIFs achieve exceptional sensitivity and resolution, essential for advanced semiconductor patterning. These resists have demonstrated successful 20 nm pitch negative tone patterning and positive tone patterning in electron beam lithography (EBL), with a remarkable sensitivity as low as 5 mJ/cm² in EUV experiments.
Technical specifications
- Material Composition: Metal ions (e.g., Zn, Co, In) coordinated with imidazolate anions (imidazole, benzimidazole, chloro-imidazole)
- Deposition Methods: Atomic/molecular layer deposition (ALD/NLD), spin-on chemical liquid deposition (CLD)
- Development Methods: Vapor non-plasma methods, solvent-based methods
- Patterning Achievements: 20 nm pitch negative and positive tone patterning using EBL
- Sensitivity: As low as 5 mJ/cm² in EUV flood experiments
Technology readiness level
The technology is at TRL 5, having been demonstrated in relevant environments with ongoing efforts to access high-resolution EUV lithography tools for further validation and development.
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