Zakaria Al Balushi's profile

Zakaria Al Balushi

Principal Investigator

UC Berkeley

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7 months ago

Electronic Materials

About

Zakaria Al Balushi develops wafer‑scale synthesis and phase control of layered and nitride semiconductors, engineering heterointerfaces for precise doping and intercalation to enable tunable opto‑ and quantum devices; holds an issued patent on near‑room‑temperature GaN synthesis.

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UC Berkeley

Epitaxy of group-iii nitrides using metal-graphene encapsulation and ammonolysis

Innovative PVD method for epitaxial group-III nitride films on silicon using metal-graphene encapsulation to bypass traditional techniques, offering a cost-effective, scalable solution for high-quality film deposition.

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Zakaria Al Balushi

Principal Investigator

UC Berkeley

Work experience

UC Berkeley

Principal Investigator

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Last updated Feb 2026